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摘要

本工作应用截面扫描隧道显微镜(XSTM)研究了In _0.53Ga _0.47As/InP异质结构的(110)解理面. 扫描隧道谱(STS)测量结果显示, InGaAs的电流-电压( I-V)隧道谱呈现与衬底InP(110)面完全不同特点. InP的 I-V谱呈现的零电流平台宽度(隧道谱表观带隙)接近材料带隙, 可基于平带模型解释. In _0.53Ga _0.47As的表观带隙却比其带隙(室温0.74 eV)高出约50%. 这反映了针尖与InGaAs发生隧穿时的不同物理图像, 需应用针尖诱导能带弯曲(TIBB)模型来解释. 基于三维TIBB模型的计算, 我们发现表面态密度是对隧道谱线特征具有敏感影响的参数. 适当选取参数不仅能定量解释InGaAs的 I-V谱的零电流平台宽度, 而且能较准确预言零电流平台的起、止能量位置,并能计算给出与实验高度重合的 I-V理论谱线.

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Abstract

The cross-sectional (110) surface of In _0.53Ga _0.47As/InP hetero-structure grown by molecular beam epitaxy on an InP (001) substrate is characterized by the cross-sectional scanning tunneling microscopy (XSTM). The cleaved (110) surface across the interface between the In _0.53Ga _0.47As layer and InP layer is atomically flat but displays slight different image contrast between the two neighbor regions. The scanning tunneling spectroscopy (STS) is used to measure the current/voltage ( I-V) spectra. The I-Vdata of the InGaAs surface and InP (110) surface show the different characteristics. The voltage range of zero-current plateau (apparent band gap) in the I-Vspectrum of InP displays the values close to its energy band gaps whereas the plateau ranges in the spectra of In _0.53Ga _0.47As are by contrast generally 50% larger than the energy band gap of In _0.53Ga _0.47As. The above phenomenon implies the different physical pictures on the tunneling of two surfaces. In the case of InP, the flat band model is feasible since the band edge states existing in the InP (110) surface can prevent the surface from being affected by the tip –induced band bending (TIBB) effect. In contrast, the TIBB effect must be taken into account to explain the I-Vspectra of the In _0.53Ga _0.47As (110) surface. A statistical analysis of the I-Vdata of In _0.53Ga _0.47As reveals that the width of current plateau in the I-Vspectrum is generally between 1.05 eV and 1.20 eV and the current onset points (turn-points) with the plateau for the different spectra are slightly different from each other. We are able to explain quantitatively the above features based on the three-dimensional TIBB model given by Feenstra ( 2003 J. Vac. Sci. Technol. B 212080 ). Our calculation reveals that the parameter of density of surface states (DOSS) is a sensitive parameter responsible for the I-Vfeatures mentioned above. According to an appropriate assignment of the value of DOSS, which is generally taken in the scope of (0.8–3.0) × 10 ¹²(cm ²·eV) ^–1, we well predict both the width and the onset points of the current-plateau. Moreover, the model also reproduces the line-shapes of the I-Vspectra measured on In _0.53Ga _0.47As.

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通信作者:查访星,fxzha@shu.edu.cn

基金项目:国家自然科学基金(批准号: 61474073, 61874069)资助的课题

Authors and contacts

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Corresponding author:Zha Fang-Xing,fxzha@shu.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 61474073, 61874069)

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参考文献

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施引文献

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The parameters of I-Vspectra	Apparent band gap/eV	V_–onset/V	V_+onset/V
Experimental	1.13	–0.67	0.46
Calculations with the density of surface states/(cm²·eV)^–1
0	1.25	–0.89	0.36
1.0 × 10¹¹	1.29	–0.89	0.40
1.0 × 10¹²	1.21	–0.75	0.46
2.0 × 10¹²	1.11	–0.66	0.45
1.0 × 10¹³	0.90	–0.49	0.41

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