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摘要

当前, 尽管集成电路制造工艺水平不断提高, 但受到量子效应的限制, 器件尺寸的缩小使业界遇到了可靠性低、功耗大等瓶颈, 微电子行业延续了近50年的“摩尔定律”将难以持续. 2004年二维材料—石墨烯的问世, 为突破集成电路的功耗瓶颈带来了新的机遇. 由于低维特性, 二维材料在一层或者几层原子厚度中表现出丰富多样的电学、磁学、力学和光学等物理特性. 其中, 铁磁性在信息处理、存储等技术上有着广泛的应用价值. 然而, 目前在实验上合成的具有铁磁性的二维材料屈指可数. 同时, 在二维系统中长程有序磁态会因为热涨落的因素在有限温度内受到强烈的抑制, 无法在室温下保持铁磁性, 这为后续工作带来了不可忽视的限制与挑战. 因此实现二维磁性材料室温下的铁磁有序及其调控是现阶段需要解决的重大问题. 本综述详细地介绍了二维磁性材料的发展过程、制备方法及其优越性能, 并着重阐述了调控二维磁性材料居里温度的方法. 最后, 扼要地分析并展望了二维磁性材料在未来的应用前景.

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Abstract

To date, despite the continuous improvement of integrated circuit manufacturing technology, it has been limited by quantum effects and the shrinking of device size has caused the industry to encounter bottlenecks such as low reliability and high power consumption. The “Moore’s Law” that has lasted for nearly 50 years in the microelectronics industry will not be sustainable. In 2004, the advent of graphene, a two-dimensional (2D) material, brought new opportunities to break through the power consumption bottleneck of integrated circuits. Due to the low dimensionality, 2D materials exhibit a variety of fasinatingly electrical, ferromagnetic, mechanical, and optical properties at an atomic level. Among them, ferromagnetism has a wide range of applications in information processing, magnetic memory and other technologies. However, only a few 2D ferromagnetic materials are successfully synthesized. Meanwhile, the magnetic long-range order will be strongly suppressed within a limited temperature range due to thermal fluctuations, and thus bringing non-ignorable limitations and challenges to subsequent work. Therefore, the realization and control of room-temperature ferromagnetism in 2D magnetic materials is the major concern at this stage. In light of the above, this review first introduces the development process, preparation methods and superior properties of 2D magnetic materials in detail, and then focuses on the methods of manipulating the Curie temperature of 2D magnetic material. Finally, we briefly give an outlook of the application prospects in the future.

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作者及机构信息

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通信作者:聂天晓,nietianxiao@buaa.edu.cn

基金项目:国家自然科学基金(批准号: 61774013)、国家重点研发计划(批准号: 2018YFB0407602)和国家科技重大专项(批准号: 2017ZX01032101)资助的课题

Authors and contacts

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Corresponding author:Nie Tian-Xiao,nietianxiao@buaa.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 61774013), the National Key R&D Program of China (Grant No. 2018YFB0407602), and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2017ZX01032101)

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参考文献

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施引文献

下载: 全尺寸图片幻灯片

2D材料/异质结构	$ {T_{\rm{c}}}/K $	计算/制造方法
VSe₂/MoS₂和VSe₂/HOPE vdW heterostructure	> 300	MBE
VS₂/WS₂vdW heterostructure	487	DFT
VS₂/MoS₂vdW heterostructure	485	DFT
VTe₂	128	DFT
MnSe₂/GaSe和MnSe₂/SnSe₂ vdW heterostructure	> 300	MBE
MnSe₂	286	DFT
MnS₂	253	DFT
MnI₂	15	DFT
NiI₂	63	DFT
CrSCI	150	DFT
CrSBr	160	DFT
CrSI	170	DFT
CrI₃	45	机械剥离法
CrI₃	161	DFT
CrI₃	95	DFT
CrCl₃	49	DFT
CrBr₃	73	DFT
CrF₃	41	DFT
CrTe₃	71	DFT
NiCl₃	400	DFT
CrGeTe₃	30	机械剥离法
CrGeTe₃	314	DFT
CrGeTe₃	130	DFT
CrSiTe₃	214	DFT
CrSiTe₃	90	DFT
CrSiTe₃	170	DFT
Cr₃Te₄	2057	DFT
Fe₃GeTe₂	20—300	机械剥离法
Fe₃GeTe₂	270—300	机械剥离法
Cr₃C	> 300	DFT

下载: 导出CSV

	E₀	E_FM /eV	E_AFM-In /eV	E_AFM-L /eV	J₁ /meV	J₂ /meV	J₃ /meV
Pure FGT	0	–11.441	–10.703	–11.272	3.675	–1.817	0.663
Bi₂Te₃/FGT	0	–16.400	–15.196	–15.742	5.906	–2.923	1.064

下载: 导出CSV

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