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摘要

紫外探测器在火灾预警、导弹跟踪以及紫外线杀菌消毒的剂量检测方面有着很重要的作用, 与人类生活息息相关. 随着探测系统集成化的发展, 对探测器的尺寸、能耗等方面的要求越来越严格, 需要外加电源工作的传统探测器已经不能满足这样的要求. 于是本文提出了一种基于NiO/GaN p-n结的紫外探测器. 利用磁控溅射的方法, 在高质量的n-GaN膜上(由金属有机化学气相沉积生长在蓝宝石衬底上)沉积一层p-NiO, 构建了NiO/GaN p-n结, 在 ± 0.5 V下显示出明显的二极管整流特性. 利用结区产生的内建电场, 器件可以在没有外加偏压的条件下工作. 0 V下对365 nm的紫外光显示出272.3 mA/W的响应度以及高达2.83 × 10 ¹⁴Jones的探测率. 得益于薄膜良好的结晶性, 暗电流低至10 ^–10A, 开关比 > 10 ³, 同时响应速度达到31 ms. 这些优异的性能显示出了基于NiO/GaN p-n结的器件在紫外探测领域广阔的应用前景, 为未来智能化集成发展提供了新的思路.

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Abstract

Ultraviolet photodetector plays an important role in fire warning, missile tracking and dose detecting of ultraviolet sterilization and disinfection, which is closely related to human lives. With the development of integrated detection system, the requirements for the size and energy consumption of the detector are becoming more and more stringent. Traditional detector that requires an external power supply can no longer meet these requirements. Moreover, a traditional ultraviolet detector is mainly composed of first-generation semiconductors and second-generation semiconductors. These semiconductors have small band gaps and large cut-off wavelengths, and are more suitable for infrared detection. When used for implementing the ultraviolet detection, an additional layer is often required, which increases not only the volume but also the cost. Gallium nitride (GaN), as a third-generation semiconductor, has a band gap of 3.4 eV and a corresponding absorption edge of 365 nm. It is a natural ultraviolet detection material. At the same time, the excellent physical and chemical properties make the devices prepared by GaN have high stability. In recent years, some studies have shown that the GaN-based ultraviolet photodetectors have excellent responsiveness, but each of these detectors usually requires an external bias and has a slow response speed. Here, we propose a high responsivity, fast response speed and self-powered ultraviolet photodetector based on NiO/GaN p-n junction. By using the magnetron sputtering, a layer of 70 nm thick p-NiO film is deposited on a high-quality n-GaN film that has been grown on a sapphire substrate by the metal-organic chemical vapor deposition. The fabricated p-n junction shows obvious rectification characteristics at ± 0.5 V. Due to the existence of the built-in electric field, the device can work without externally applied bias. Under zero bias, the detector shows a responsivity of 272.3 mA/W for 365 nm ultraviolet light while the intensity is 50 μW/cm ², and has a detectivity as high as 2.83 × 10 ¹⁴Jones. This indicates that the detector has a high sensitivity even for very weak light. Owing to the good crystallinity of the film, the dark current is as low as 10 ^–10A, the switching ratio is > 10 ³, and the response speed reaches 31 ms. These excellent properties show the broad application prospects of the devices based on NiO/GaN p-n junctions in the field of self-powered ultraviolet detection, and thus providing new ideas for the future development of intelligent integration.

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作者及机构信息

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通信作者:郭道友,dyguo@zstu.edu.cn; 刘爱萍,liuaiping1979@gmail.com

基金项目:浙江省自然科学基金(批准号: LY20F040005)和浙江理工大学科研启动基金(批准号: 20062224-Y)资助的课题

Authors and contacts

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Corresponding author:Guo Dao-You,dyguo@zstu.edu.cn; Liu Ai-Ping,liuaiping1979@gmail.com

Funds:Project supported by the Natural Science Foundation of Zhejiang Province, China (Grant No. LY20F040005) and the Scientific Research Starting Foundation of Zhejiang Sci-Tech University, China (Grant No. 20062224-Y)

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参考文献

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施引文献

下载: 全尺寸图片幻灯片

Photodetector	Wavelength	Responsivity/(mA·W^–1)	Detectivity/Jones	Rise/Decay time/ms	Ref.
GaN/ZnO	350 nm	95.8	2.9 × 10¹²	730/50	[22]
GaN/r-GO:Ag NPs	360 nm	266	2.62 × 10¹¹	680/700	[23]
GaN/NiO	365 nm	150	—	—	[20]
GaN/Ga₂O₃	365 nm	54.49	—	—	[24]
r-GO/GaN	350 nm	1.54	1.45 × 10¹¹	60/267	[25]
ZnO nanoarrays/CdS/GaN	300 nm	176	2.5 × 10¹²	350	[26]
NiO/GaN	365 nm	272.3	2.83 × 10¹⁴	31/37	This work

下载: 导出CSV

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