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摘要

二维磁性材料是二维材料家族的新成员, 其在单原胞层厚度依然保持长程磁序且易受外场调控, 这为二维极限下的磁性以及其他新奇物理效应的研究提供了理想的平台, 又为低功耗自旋电子学/磁存储器件的研制开辟了新的途径, 成为国际上备受关注的前沿热点. 本综述首先系统介绍了近年来发现的各类本征二维磁性材料的晶体结构、磁结构以及磁性能, 并讨论了由磁场、电场、静电掺杂、离子插层、堆叠方式、应变、界面等外场调控二维磁性材料磁性能的研究进展, 最后进行总结并展望了二维磁性材料未来发展的研究方向. 深入理解二维磁性材料磁性的起源和机理、研究其磁性能与微观结构之间的关联, 为寻找具有更高居里温度(奈尔温度)的磁性材料、设计多功能的新概念器件具有重要意义.

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Abstract

The recently discovered two-dimensional magnetic materials have attracted tremendous attention and become a cutting-edge research topic due to their long-range magnetic ordering at a single-unit-cell thickness, which not only provide an ideal platform for studying the magnetism in the two-dimensional limit and other novel physical effects, but also open up a new way to develop low-power spintronics/magnetic storage devices. In this review, first, we introduce the crystal structures, magnetic structures and magnetic properties of various recently discovered intrinsic two-dimensional magnetic materials. Second, we discuss the research progress of controlling the magnetic properties of two-dimensional magnetic materials by magnetic field, electric field, electrostatic doping, ion intercalation, stacking, strain, interface, etc. Finally, we give a perspective of possible research directions of the two-dimensional magnetic materials. We believe that an in-depth understanding of the origin and mechanism of magnetism of the two-dimensional magnetic materials as well as the study of the relationship between magnetic properties and microstructures are of great significance in exploring a magnetic material with a substantially high Curie temperature (Néel temperature), and designing multifunctional new concept devices.

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作者及机构信息

通信作者:王以林,yilinwang@email.sdu.edu.cn

基金项目:国家自然科学基金重大研究计划(批准号: 92065206)和山东省自然科学基金(批准号: ZR2020MA071)资助的课题

Authors and contacts

Corresponding author:Wang Yi-Lin,yilinwang@email.sdu.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 92065206) and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2020MA071)

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参考文献

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施引文献

下载: 全尺寸图片幻灯片

材料类别	材料	磁耦合	磁转变温度T_N/T_c	描述模型	带隙/eV	参考文献
过渡金属卤化物	CrCl₃	A-type AFM	1L: 10 K/T_c 2L: 16 K/T_N Bulk: 17 K/T_N	//XY	3.0	[44,46,47]
	CrBr₃	FM	1L: 27 K/T_c 2L: 36 K/T_c Bulk: 37 K/T_c	⊥between Isingand Heisenberg	2.2	[44,45,47]
	CrI₃	A-type AFM/Few L	1L: 45 K/T_c 2L: 45 K/T_N Few L: 46 K/T_N	⊥Ising	1.2	[44,45,47,48]
	CrI₃	FM/Bulk	Bulk: 61 K/T_c	⊥Ising	1.2	[44,45,47,48]
	1T-FeCl₂	A-type AFM/Bulk	Bulk: 24 K/T_N	⊥		[44]
	1T-FeCl₂	FM/1L	1L: 109 K/T_c	⊥Heisenberg	Semimetal	[55]
	1T-FeBr₂	A-type AFM/Bulk	Bulk: 14 K/T_N	⊥		[44]
	1T-FeBr₂	FM/1L	1L: 81 K/T_c	⊥Heisenberg	Semimetal	[55]
	1T-FeI₂	Intralayer AF-stripy/Bulk	Bulk: 9 K/T_N	⊥		[44]
	1T-FeI₂	FM/1L	1L: 42 K/T_c	⊥Heisenberg	Semimetal	[55]
	1T-CoCl₂	AFM/Bulk	Bulk: 25 K/T_N	//		[44]
	1T-CoCl₂	FM/1L	1L: 85 K/T_c	Heisenberg		[55]
	1T-CoBr₂	A-type AFM/Bulk	Bulk: 19 K/T_N	//		[44]
	1T-CoBr₂	FM/1L	1L: 23 K/T_c	Heisenberg		[55]
	1T-CoI₂	AFM	Bulk: 11 K/T_N			[44]
	NiI₂	A-type AFM	2.0 nm: 35 K/T_N Bulk: 75 K/T_N		1.11/1L 1.23/Bulk	[29]
过渡金属硫化物	CrSe^#	FM	Bulk: 280 K/T_c			[21]
	CrTe₂^#	FM	Bulk: 310 K/T_c		0	[97]
	CrTe	FM	11 nm: 140 K/T_c 45 nm: 205 K/T_c	⊥	0	[19]
	Cr₂Te₃	FM	5 nm: 280 K/T_c 40.3 nm: 170 K/T_c	⊥	0	[57]
	FeTe (hexagonal)	FM	4 nm: 170 K/T_c Bulk: 220 K/T_c	Heisenberg		[20]
	${\rm MnSe}_x{}^*$	FM/1L	1L: > 300 K/T_c	⊥	3.39	[61]
	${\rm MnSe}_x{}^*$	AFM/Bulk		⊥	3.39	[61]
	1T-VSe₂^*	FM/1L	1L: > 300 K (470 K)/T_c	//	0	[22,60]
	2H-VSe₂	A-type AFM		//	Semimetal	[98]
	V₅S₈	FM/3.2 nm	3.2 nm: 2 K/T_c	⊥	0	[99]
	V₅S₈	AFM/Bulk	Bulk: 32 K/T_N	⊥	0	[99]
	FeTe (tetragonal)	AFM-Néel	5 nm: 45 K/T_N Bulk: 70 K/T_N	Heisenberg		[20]
	Cr₂S₃	FM	15 nm: 120 K/T_c 45 nm: 300 K/T_c			[59]
	Cr₂O₃^#	AFM	Bulk: 307 K/T_N	⊥	3.5	[100,101]
过渡金属磷化合物	FePS₃	Intralayer AF-zigzag, interlayer FM	1L: 118 K/T_N Bulk: 118 K/T_N	⊥Ising	1.5	[30,65,72]
	NiPS₃	Intralayer AF-zigzag, interlayer FM	2L: 130 K/T_N Bulk: 150 K/T_N	// XY	1.6	[31,65,67]
	MnPS₃	Intralayer AF-Néel, interlayer FM	Bulk: 78 K/T_N	// Heisenberg	2.4	[65,68,71]
	CoPS₃	Intralayer AF-zigzag, interlayer FM	Bulk: 120 K/T_N	// XY		[66]
	MnPSe₃	Intralayer AF-zigzag, interlayer FM	5L: 70 K/T_N Bulk: 70 K/T_N	// XY	2.3	[32]
	FePSe₃^#	Intralayer AF-zigzag, interlayer FM	Bulk: 119 K/T_N	⊥Ising	1.3	[73,74]
	CrPS₄	A-type AFM	Bulk: 36 K/T_N	⊥	1.3	[75,76,102]
	CrPS₄	FM/1L	1L: 50 K/T_c	⊥	2.28	[77]
过渡金属锗碲化合物	Cr₂Si₂Te₆	FM	1L: 80 K/T_c Bulk: 31 K/T_c	⊥Ising	1.2	[80,81,103]
	Cr₂Ge₂Te₆	FM	2L: 28 K/T_c 3L: 35 K/T_c Bulk: 61 K/T_c	⊥Heisenberg	0.45	[17,80]
	Fe₃GeTe₂	FM	1L (onAl₂O₃): 20 K/T_c 1L (on Au): 130 K/T_c Bulk: 220—230 K/T_c	⊥Ising	0	[38,82]
	Fe₅GeTe₂	FM	12 nm: 270—300 K/T_c Bulk: 310 K/T_c	⊥	0	[26]
过渡金属铋碲化合物	MnBi₂Te₄	A-type AFM	3SL: 18 K/T_N 4SL: 21 K/T_N Bulk: 25 K/T_N	⊥Heisenberg		[84,85]
	MnBi₄Te₇	A-type AFM	Bulk: 13 K/T_N	⊥		[89]
	MnBi₆Te₁₀	A-type AFM	Bulk: 11 K/T_N	⊥		[89]
	VBi₂Te₄	A-type AFM		//		[90,104]
	NiBi₂Te₄	A-type AFM		//		[90]
	EuBi₂Te₄	A-type AFM		//		[90]
过渡金属氧卤化物	FeOCl	AFM	2.0—2.4 nm: 14 K/T_N Bulk: 84—92 K/T_N			[34]
	CrOCl	FM/1L	1L: 160 K/T_c	⊥Ising	2.38	[91]
	CrOCl	AFM	Bulk: 13.5 K/T_N	⊥	2.31	[96]
	CrSBr	FM/1L	1L: 160 K/T_c	//Heisenberg	0.757	[93]
	CrSCl	FM/1L	1L: 150 K/T_c	// Heisenberg	0.856	[93]
	CrSI	FM/1L	1L: 170 K/T_c	// Heisenberg	0.473	[93]
注: 绿色背底表示为实验中发现的铁磁材料, 橙色背底表示为实验中发现的反铁磁材料, 灰色背底表示为理论预测的铁磁或反铁磁材料; 上标^#为体相材料, 其单层磁性在实验中还未发现; 上标为磁性是否为本征磁性尚未确定的磁性材料; ⊥表示易磁化轴垂直于平面(ab), ∥表示易磁化轴平行于平面(ab)*.

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