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摘要

圆柱形双栅场效应晶体管(CSDG MOSFET)是在围栅MOSFET器件增加内部控制栅而形成, 与双栅、三栅及围栅MOSFET器件相比, 圆柱形双栅MOSFET提供了更好的栅控性能和输出特性. 本文通过求解圆柱坐标系下的二维泊松方程, 得到了圆柱形双栅 MOSFET的电势模型; 进一步对反型电荷沿沟道积分, 建立其漏源电流模型. 分析讨论了圆柱形双栅MOSFET器件的电学特性, 结果表明: 圆柱形双栅MOSFET外栅沿沟道的最小表面势和器件的阈值电压随栅介质层介电常数的增大而减小, 其漏源电流和跨导随栅介质层介电常数的增大而增大; 随着器件参数的等比例缩小, 沟道反型电荷密度减小, 其漏源电流和跨导也减小.

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Abstract

The cylindrical surrounding double-gate metal-oxide-semiconductor field-effect transistor (CSDG MOSFET) is formed by adding an internal control gate to the cylindrical surrounding-gate (CSG) MOSFET. The inner gate of CSDG MOSFET acts as a second gate for enhanced charge control. At present, the research of CSDG MOSFET structure is widely concerned. Compared with double-gate MOSFET, triple-gate MOSFET and CSG MOSFET, the CSDG MOSFET provides good controllability of the gate over the channel. Additionally, the device allows for higher volume inversion than CSG MOSFET, which leads to better output characteristics. In order to study the electrical characteristics of CSDG MOSFET, the potential model of CSDG MOSFET is obtained by solving the two-dimensional Poisson equation in cylindrical coordinates. The effects of gate dielectric, channel length and gate dielectric thickness on the surface potential and electric field of CSDG MOSFET are studied. Besides, the drain-source current model of CSDG MOSFET is established by integrating the inverse charge along the channel. The effects of gate dielectric and gate dielectric thickness on the transconductance of CSDG MOSFET are studied. In addition, the effects of the downscaling of device parameters on the transfer characteristics and transconductance of CSDG MOSFET are studied. The electrical characteristics of CSDG MOSFET are analyzed and discussed. The results show that the minimum surface potential along the channel of CSDG MOSFET decreases with the increase of gate dielectric constant of gate dielectric layer. The electric field along the channel and along the radius, drain-source current and transconductance of CSDG MOSFET increase as the gate dielectric constant increases. The threshold voltage of CSDG MOSFET decreases as the gate dielectric constant increases. Moreover, with the downscaling of device parameters, the transfer characteristics and transconductance of CSDG MOSFET decrease. The performance of CSDG MOSFET can be significantly improved by using high-k gate dielectrics.

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作者及机构信息

通信作者:姚若河,phrhyao@scut.edu.cn

基金项目:广东省重点领域研发计划(批准号: 2019B010143003)和国家自然科学基金(批准号: 61871195)资助的课题

Authors and contacts

Corresponding author:Yao Ruo-He,phrhyao@scut.edu.cn

Funds:Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2019B010143003) and the National Natural Science Foundation of China (Grant No. 61871195)

文章全文: translate this paragraph

参考文献

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施引文献

下载: 全尺寸图片幻灯片

参数	定义	数值
R₁/nm	内栅介质层与硅体接触处半径	4
R₂/nm	外栅介质层与硅体接触处半径	14
L/nm	栅长度	30
t_ox/nm	介质层厚度	2
N_a/cm^–3	沟道掺杂浓度	10¹⁷
ε₀/(F·cm^–1)	真空介电常数	8.854 × 10^–14
ε_ox	栅介质介电常数	ε₀, 3.9ε₀, 7ε₀, 12ε₀, 20ε₀
ε_si	硅介电常数	11.8ε₀

下载: 导出CSV

L/nm	R₁/nm	R₂/nm	t_ox/nm	t_Si/nm
3	0.714	1.43	0.285	0.714
5	1.25	2.5	0.5	1.25
7	1.67	3.33	0.667	1.67
10	2.5	5	1	2.5

下载: 导出CSV

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