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摘要

等离子密度及金属离化率是影响高功率脉冲磁控溅射沉积薄膜质量的关键因素, 高功率脉冲磁控溅射参数(如电压、脉宽、沉积气压及峰值电流等)影响着等离子密度和金属离化率. 本文利用MATLAB/SIMULINK建立等效电路模型, 对高功率脉冲磁控溅射钛(Ti)靶材的放电电流曲线进行模拟, 利用鞘层电阻计算Ti靶材鞘层处的等离子密度, 并采用半圆柱体-整体模型理论计算Ti的离化率. 研究发现: 采用由电容、电感和电阻组成的等效电路模型, 可以模拟Ti靶材的放电电流; 在不同高功率脉冲溅射电压、脉冲宽度和不同沉积气压下, 真空室等离子密度在2 × 10 ¹⁷—9 × 10 ¹⁷m ^–3范围内, 随着溅射电压、脉冲宽度及沉积气压的增加, 鞘层处的平均等离子密度增大; 在不同沉积气压下, Ti的离化率值在31%—38%之间, 随着气压增加, Ti的离化率增加.

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Abstract

High-power pulsed magnetron sputtering has become a popular research tool in surface technology industry because it can prepare the films with excellent surface quality. The plasma density and metal ionization rate are the key factors affecting the quality of the film deposited by high-power pulsed magnetron sputtering. The parameters of high-power pulsed magnetron sputtering (such as applied voltage, pulse width, deposition pressure and peak current) affect the plasma density and metal ionization rate. In this paper, in order to more easily understand the plasma densities and metal ionization rates at the different process parameters, the plasma densities and ionization rates are calculated numerically. An equivalent circuit model established by MATLAB/Simulink software is used to obtain the discharge current curve of high-power pulsed magnetron sputtering titanium (Ti) target. The plasma density near the plasma sheath is calculated by the sheath resistance in the equivalent circuit model. The ionization rate of Ti is calculated by using the semi-cylinder global model theory combined with the discharge current simulated by equivalent circuit model. It is found that under the different high power pulse sputtering voltages, pulse widths and different deposition pressures, the discharge modes are of gas discharge and metal ion discharge, and the gas discharge interacts with metal ion discharge. The equivalent circuit model is produced by the main discharge mode, and the equivalent circuit model composed of capacitor, inductor and resistors in series and in parallel can be used to simulate the discharge current of Ti target. The result shows that the simulated discharge current is accurate in the rising edge and peak value in comparison with experimental data. The value of electron component in the model is related to the saturation ion current. According to the sheath resistance in the model, the average plasma density in the vacuum chamber increases with increasing sputtering voltage, pulse width and deposition pressure. And the plasma density in the vacuum chamber lies in a range of (2–9) × 10 ¹⁷m ^–3. The particle equilibrium equation is established by using the semi-cylinder global model theory. The electron temperature (5 eV) and discharge current are used as boundary conditions to calculate the ionization rate of Ti. The value of the ionization rate of Ti is in a range of 31%–38% at different deposition pressures, and the ionization rate of Ti increases with the increase of deposition pressure.

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作者及机构信息

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通信作者:冷永祥,yxleng@263.net

基金项目:表面物理与化学重点实验室项目(批准号: 6142A02190402)资助的课题

Authors and contacts

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Corresponding author:Leng Yong-Xiang,yxleng@263.net

Funds:Project supported by the Fund of Science and Technology on Surface Physics and Chemistry Laboratory, China (Grant No. 6142A02190402)

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