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近年来, α-MoO 3在忆阻器件的研究中得到广泛关注, 其中氧含量的变化导致电阻率的改变, 以及独特的层状结构有利于各种离子的插层从而调节电导, 因此其在离子栅结构的突触晶体管的研究中发挥出重要作用. 本文主要对层状 α-MoO 3的基本性质、二维层状 α-MoO 3的大面积制备方法和特性及其在存储计算领域的应用进展进行了分析. 首先阐述了 α-MoO 3的晶体结构、能带结构以及缺陷态. 对比了大面积 α-MoO 3的制备方法, 包括一步法直接得到 α-MoO 3纳米片, 以及通过磁控溅射和原子层沉积方法结合后退火工艺实现 α-MoO 3薄膜的制备. 详细讨论了不同合成方法制得的 α-MoO 3在存储计算应用中的优势. 对比 α-MoO 3在阻变存储中的器件性能, 总结 α-MoO 3基神经突触器件性能及其应用进展. 最后, 结合 α-MoO 3近期研究进展展望了其在存储计算领域的机会与挑战.In recent years, α-MoO 3has received extensive attention in the research of memristor devices. The variation of valence of molybdenum will lead the resistivity to change, and the unique layer structure is beneficial to the implantation of donor ion into free space to adjust the conductance, so that it has a great influence on the study of synaptic transistors. This paper mainly summarize the properties of α-MoO 3, the method and characteristics of large-scale two-dimensional α-MoO 3and analyze the recent progress of in-memory computing based on α-MoO 3. Primarily, this paper introduces crystal structures, band structure and defect state of α-MoO 3. The synthesis methods of large-area α-MoO 3are compared with each other, including the one-step method to directly obtain α-MoO 3nanosheets, and the combined post-annealing process of magnetron sputtering or atomic layer deposition to prepare the thin α-MoO 3films. In the one-step synthesis method we conclude that the chamber pressure influences the ratio of MoO 3to MoO 3–x, and the growth temperature affects the ratio of α-MoO 3to β-MoO 3. That is to say, the phase composition of molybdenum trioxide, the concentration of precursors has an important influence on the film size. The advantages of α-MoO 3synthesis by different methods in memory computing applications are discussed in detail. And then, this paper summarizes the device performance of α-MoO 3in memristor and the application progress of α-MoO 3-based neuromorphic devices, and analyzes the performance of α-MoO 3-based resistive random access memory such as switching ratio, endurance, and stability in detail. The synaptic functions of different structural device units are extensively studied, and various typical synapse functions are realized such as short-term plasticity, long-term plasticity, paired pulse facilitation, etc. It shows the excellent characteristics of low energy consumption in the simulation of synaptic plasticity. The use of short-term memory and long-term memory modes of the device can realize the functions of image memory and preprocessing. Through the memristor array combined with the back-propagation network, the high-precision handwriting recognition can be realized. Finally, combining the recent research progress of α-MoO 3, its opportunities and challenges in the field of memory computing are prospected.
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Keywords:
- α-MoO3/
- large-scale synthesis/
- memory computing/
- neuromorphic devices
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Ref. Carrier flow Pressure Substrate temperature/℃ Growth time/min Lateral size Thickness/nm [13] — Atmospheric 580 120 69.6 μm 5.3—89.8 [16] — Atmospheric 850—1050 30 0.72 cm — [17] Ar Atmospheric 750 20 Centimeters scale 4.3—550 [18] Ar 310 mTorr 530 45 500 µm × 500 µm 8 ± 0.75 [19] Ar & O2 100 mTorr 150 90 Wafer-scale 30 [20] — Atmospheric 540 20 Centimeters scale ≥ 1.4 [21] N2 Atmospheric 350—480 20 Several tens micron 2.8—14 
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Ref. Ron/Roff Endurence Vforming/V Vset/V Vreset/V Retention/s Compliance/mA [24] 10—102 60 1.8—3 1—2 0.5—1 — 2—5 [36] 103 — –2.2 1.7 3.3 103 10-3 [37] > 105 50 3.2—4.1 3—3.9 4.45—5.9 104 50 [38] 103 > 6000 –2.7 –2 2.5 > 104 0.8 [39] 18 — 24.5 1.8 –1.1 3.6 × 103 1 [40] ～350 — — 1—3 — 2.6 × 106 — [41] 1.15 × 103 7 — 4 8 4.5 × 103 — [42] 1.6 × 102 500 — –3 3 — — [43] 106 > 100 — 0.8 –0.2—1.6 2 × 104 102 [44] 20 — — 2.2 –1.1 1.4 × 103 0.1 [45] — — Free 0.4 –1 — 0.1 下载:
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