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摘要

可饱和吸收体作为非线性光学行为的物质载体, 是获得超快激光的关键材料. 基于石墨烯、过渡金属硫化物、拓扑绝缘体、黑磷等二维材料为代表的可饱和吸收体具有不同的光学优点, 但仅依赖某一方面光学优势的单一材料, 很难避免其应用的局限性. 通过异质结结构结合不同二维材料的优势, 达到光学互补效应, 为制备高性能的新型可饱和吸收体, 实现短脉宽高峰值功率的输出提供了思路和借鉴. 本文总结了异质结可饱和吸收体的制备方法、能带匹配模型、电子跃迁机理, 并从工作波长、输出脉宽、重复频率、脉冲能量等重要参数对国内外基于二维材料异质结激光器的研究进展进行了综述, 此外, 对二维材料异质结在光调制器、超快激光、可饱和吸收体、光开关等方向的发展前景进行了展望.

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Abstract

As the substance carrier of nonlinear optical phenomenon, saturable absorber is an essential material for generating the ultrafast pulse laser. The saturable absorbers based on graphene, transition metal sulfides, topological insulators, black phosphorus and other two-dimensional (2D) materials exhibit different optical advantages. However, limitations of those single 2D materials as saturable absorbers exist. The nanomaterial heterojunction structure can combine the advantages of different 2D materials to achieve optical complementarity, and it also provides new ideas for generating the ultrafast laser with ultrashort pulse duration and high peak power. Here in this paper, the preparation methods, band alignment and the electronic transition mechanism of heterojunction saturable absorbers are summarized, and the recent research progress of ultrafast lasers based on 2D nano-heterostructures are also reviewed, including the wavelength, pulse width, repetition frequency and pulse energy. Therefore, 2D nano-heterostructure exhibits great potential applications in future optical modulator and optical switch.

Keywords:

作者及机构信息

通信作者:董华锋,hfdong@gdut.edu.cn

基金项目:国家自然科学基金(批准号: 62005053)、广东工业大学青年百人项目(批准号: 220413293)和广东省自然科学基金(批准号: 2020A1515011178, 2017B030306003)资助的课题

Authors and contacts

Corresponding author:Dong Hua-Feng,hfdong@gdut.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 62005053), the One-Hundred Young Talents Program of Guangdong University of Technology, China (Grant No. 220413293), and the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2020A1515011178, 2017B030306003)

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参考文献

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施引文献

下载: 全尺寸图片幻灯片

Material type	Type of Laser	Fabrication method	λ/nm	Pulse width	Repetition rate/MHz	Energy/nJ	Ref.
InAs/GaAs QDs	FL	MBE	1556.00	920.00 fs	8.16	—	[75]
GaN/InGaN	—	FIBE	408.00	1.40 ps	10.00		[78]
2D Te/BP	SL	LPE	1049.10	404.00 fs	42.10	6.9400	[65]
Te/Se	FL	HM	1500.00	889.00 fs	18.50	—	[76]
Te/Se	FL	HM	1000.00	11.70 ps	18.50	—	[76]
Graphene/MoS₂	SL	LPE	1061.56	306.00 ps	83.30	—	[34]
Graphene/MoS₂	SL	LPE	1063.00	92.00 fs	84.75	—	[66]
Graphene/MoS₂	SL	CVD	1037.20	236.00 fs	41.84	19.0000	[64]
Graphene/MoS₂	FL	CVD	1571.80	830.00 fs	11.93	—	[74]
Graphene/MoS₂	FL	LPE HM	1571.80	2.20 ps	3.47	—	[68]
Graphene/WS₂	FL	CVD	1593.50	55.60 ps	3.63	—	[79]
Graphene/WS₂	FL	CVD	1568.30	1.12 ps	8.83	0.5400	[69]
Graphene/WS₂	FL	LPE	1066.20	450.00 ps	19.68	0.1108	[80]
Graphene/Mo₂C	FL	CVD	1599.00	723.00 fs	15.33	0.7130	[70]
Graphene/BP	FL	LPE	1529.92	820.00 fs	7.43	—	[71]
Graphene/BP	FL	LPE	1531.00	148.00 fs	7.50	—	[71]
Graphene/Bi₂Te₃	FL	CVD	1565.60	1.80 ps	6.91	—	[56]
Graphene/Bi₂Te₃	FL	CVD	1049.10	144.30 ps	3.70	—	[56]
Graphene/Bi₂Te₃	FL	CVD	1568.07	837.00 fs	17.30	0.1780	[72]
Graphene/Bi₂Te₃	FL	CVD	1058.90	189.94 ps	79.13	—	[81]
Bi₂Te₃/FeTe₂	FL	SMD	1064.00	164.70 ps	15.02	—	[73]
Bi₂Te₃/FeTe₂	FL	SMD	1550.00	481.00 fs	23.00	—	[73]
MoS₂/graphene/WS₂	FL	CVD	1567.51	—	2.10	—	[82]
MoS₂/WS₂	FL	MSD	1560.00	154.00 fs	74.60	—	[57]
WS₂/MoS₂/WS₂	FL	MSD	1562.66	296.00 fs	36.46	—	[63]
MoS₂/Sb₂Te₃/MoS₂	FL	MSD	1554.00	286.00 fs	36.40	—	[77]
注: SL, solid-state laser; FL, fiber laser; MBE, molecular beam epitaxy; FIBE, focused ion beam etching; LPE, liquid phase exfoliation; HM, hydrothermal method; CVD, chemical vapour deposition; SMD, selective metal deposition; MSD, magnetron sputtering deposition; SASR, self-assembly solvothermal route.

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