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忆阻器作为一种可实现高密度、多功能、低功耗、多级数据存储的新型电子元器件, 为电路结构设计、信息存储理论及突触仿生模拟等领域带来了重大变革. 在广泛的忆阻器种类中, 蛋白质基忆阻器由于具有结构可控降解、原料丰富低廉、生物兼容等优势, 在可植入计算、人机交互、人机结合等前沿信息技术领域有着其他材料基忆阻器无可比拟的天然优势, 因此被视为是构建下一代高科技信息电子产品最具潜力的候选者. 本文归纳了近期蛋白质基忆阻器的研究进展, 首先总结了部分蛋白质的研究进展, 包含被广泛研究的鸡蛋白蛋白及性能优越的人工重组蛋白等, 然后进一步介绍了蚕丝蛋白基忆阻器的研究历程, 详细介绍了功能化策略所带给蚕丝蛋白基介观忆阻器的性能提升, 并分析了功能化蚕丝蛋白结构与性能之间的构效关系. 最后对蛋白质基忆阻器性能进行了综合分析, 并展望了该生物电子器件的未来发展契机.Memristor, as a new type of electronic component that can realize high density, multi-function, low power consumption, and multi-level data storage, has brought significant changes to the field of circuit structure design, information storage theory, and artificial synapses simulation. In a wide range of memristors, the protein-based memristors have unparalleled natural advantages in other cutting-edge information technology fields such as implantable computing, human-computer interaction, and human-computer integration due to their controllable degradation, rich and cheap raw materials, and biocompatibility. Therefore, the memristor is considered as the most potential candidate for building the next generation of high-tech information electronic device. In this article, the latest research progress of protein based memristors is comprehensively reviewed. The research progress of other proteins, including the widely studied egg albumen and artificial recombinant protein with excellent performance are first summarized, and then the research process of silk fibroin-based memristors, the performance improvement of silk fibroin-based memristors brought by functional strategies are comprehensively introduced. The Structure-activity relationship between structure and performance of functionalized silk fibroin is analyzed. Finally, the performance of the protein-based memristor is comprehensively analyzed, and the future development opportunities of the green electronic device are also prospected.
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Keywords:
- mesoscopic functionalization/
- protein/
- memristor/
- electronic devices
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] [74] [75] [76] [77] [78] -
器件结构 开关比 开关电压/V 保持时长/s 擦写速度/ns 循环次数 Al/蚕丝蛋白/ITO[61] 10 10.4/–11.5 — — — Ag/蚕丝蛋白/Au[63] 107 1.3—3.4/–1.3 4.5 × 103 — — Ag/蚕丝蛋白/Au[64] 105 0.7—1.7/–1.2 104 — 30 Mg/蚕丝蛋白/Mg[65] 104 0.7—1.7/–1 104 — 50 Au/蚕丝蛋白/Pt[74] 104 3/–1.7 5.7 × 103 — 30 Al/CdSe-蚕丝蛋白/ITO[73] — — 104 — — Ag/Au-蚕丝蛋白/ITO[68] 102 0.4/–0.2 1.4 × 104 — 100 Ag/Ag-蚕丝蛋白/ITO[24] 103 0.3/–0.18 104 10 100 Al/CDs-蚕丝蛋白/ITO[70] — 3/–1 106 — 100 W/鸡蛋白蛋白/ITO[32] 102 2/7 — — 100 Ag/鸡蛋白蛋白/Al[75] 102 0.6/–0.7 104 75 50 Pt/铁蛋白/Pt[34] 105 2.2/–1.1 6 × 103 — 70 Ag/丝胶蛋白/Au[33] 106 2.5/–0.8 103 — 21 Al/S-layer/ITO[35] 6.2 8/–8 4 × 103 — 500 Cu/rDnaj/Pt[41] 106 0.12/–0.08 106 — 100 Ag/角蛋白/FTO[50] 103 1.5/–1.5 104 — 100 Ag/溶菌酶/Pt[47] 106 1/–1.3 104 100 200 
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[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] [74] [75] [76] [77] [78]
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