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摘要

硅基光波导开关技术是公认的低成本光交换技术, 在电信网络、数据中心和高性能计算领域中都具有非常广泛的应用前景. 本文系统综述了近年来硅基光波导开关技术研究取得的主要进展, 首先对马赫-曾德尔干涉仪型、微环谐振型和微电子机械系统驱动波导型三种硅基光波导开关技术进行了介绍, 并对不同原理的光开关技术的应用场景进行了总结; 然后讨论了影响大端口光开关性能的关键技术, 特别着重于拓扑架构、无源器件和光电封装等方面; 最后对硅基光波导开关技术的技术挑战和研究方向进行了展望, 其对未来硅基全光交换技术的实用化具有指导性意义.

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Abstract

Silicon photonic switch is recognized as a cost-effective optical switching technology because it has many applications in long-haul telecommunication networks, short-reach data center and high-performance computing. In this paper, the research progress of various silicon photonic switch technologies is reviewed systematically. Firstly, the principles of three kinds of switch technologies including Mach-Zehnder interferometer (thermo-optic and carrier-injection types), micro-ring resonator (thermo-optic and carrier-injection types) and micro-electro-mechanical-system actuated waveguide coupler (electrostatic actuated type) are introduced. The switch technologies with the state-of-the-art insertion loss, crosstalk, switch time, footprint and power consumption are summarized and compared. Then the recent demonstrations of large-port silicon photonic matrix based on the above switch technologies are discussed. In this paper, we also investigate the key technologies such as topological architecture, passive components and optoelectronic packaging, which affect the performance of large-port optical switch matrix. Specifically, we study the scalability of various topologies, low-loss/broadband waveguide components, high-density optical/electrical packaging and control interface to improve the overall performance of the silicon photonic switch matrix. Finally, we discuss the critical technical challenges that might hamper the commercialization of silicon photonic switches and envision their future.

Keywords:

作者及机构信息

通信作者:付红岩,hyfu@sz.tsinghua.edu.cn

基金项目:深圳市知识创新计划基础研究项目(批准号: JCYJ20170818094001391, JCYJ20180507183815699)、深圳市科技创新委员会孔雀技术创新项目(批准号: KQJSCX20170727163424873)和清华-伯克利深圳学院引进人才科研启动经费项目资助的课题.

Authors and contacts

Corresponding author:Fu Hong-Yan,hyfu@sz.tsinghua.edu.cn

Funds:Project supported by the Shenzhen Technology and Innovation Council, China (Grant Nos. JCYJ20170818094001391, JCYJ20180507183815699, KQJSCX20170727163424873) and Tsinghua-Berkeley Shenzhen Institute (TBSI) Faculty Start-up Fund, China.

文章全文: translate this paragraph

参考文献

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施引文献

下载: 全尺寸图片幻灯片

参考文献	年份	研究机构	相移器类型	相移器长/μm	开关时间	功耗/mW	损耗/dB	串扰/dB
[18]	2015	IBM	电光PIN	250	4 ns	1	1	–23
[19]	2013	CAS	电光PIN	400	–	–	–	–31
[20]	2011	IME	热光TiN	1000	144 μs	0.49	0.3	–23
[21]	2010	Kotura	电光PIN	4000	6 ns	0.6	3.2	–16
[22]	2015	UBC	热光TiN	4270	780 μs	0.05	3.3	–26
[23]	2013	MIT	热光掺杂硅	～10	2.4 μs	12.7	0.5	–20
[24]	2016	ZJU	热光TiN	20	–	–	–	–20
[25]	2014	AIST	热光TiN	～150	10 μs	30	0.5	–50
[26]	2016	IBM	电光PIN	250	4 ns	–	2	–34.5
[27]	2016	Huawei	热光TiN	250	1340/70 μs	0.5/10	0.5	–22

下载: 导出CSV

参考文献	年份	研究机构	损耗/dB	串扰/dB	功耗/mW	开关时间	带宽/nm
[30]	2011	Columbia U	——	–12	——	2.78 ns	0.56
[31]	2009	HKUST	1.64	–11	～0.1	1.3 ns	0.45
[32]	2012	IME	4.3	–10	37	1 ns	0.8
[33]	2014	TU/e	2	–20	120	17 μs	0.8
[34]	2009	Cornell U	2	–9.8	17.4	7 ns	0.48
[35]	2014	SJTU	3.4	–20	0.69(电光) 2.3(热光)	414 ps	0.48

下载: 导出CSV

研究机构	UC Berkeley^[45]	Tohoku U^[46]	Tohoku U^[47]	Aeponyx Inc^[48]
驱动电压/V	42	26	28.2	118
开关时间/μs	0.91	18	——	300
插入损耗/dB	0.47	1	2.6	14.8
带宽/nm	300	——	0.5	宽带
串扰/dB	–60	–17	–32.9	–40

下载: 导出CSV

开关种类	MZI型		MRR型		MEM驱动波导型
开关种类	电光	热光	电光	热光	垂直耦合	平面耦合	端面耦合
保持开状态的功耗/mW	0.6–1	0.05–30	0.7–37	17.4–120	0	0	0
文献	[18,21,26]	[22,23,25,27]	[32,35]	[33,34]	[45]	[46,47]	[48]

下载: 导出CSV

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