In order to break through the limit relationship between the breakdown voltage and specific on-resistance for LDMOS (lateral double-diffused MOSFET), a new super junction LDMOS is proposed with the electric field modulation by differently doping the buffered layer in this paper for the first time based on the buffered SJ-LDMOS. The new electric field introduced by the differently doping buffered layer, owing to the electric field modulation, is brought to the surface electric field of SJ-LDMOS, which alleviates a low lateral breakdown voltage due to the uneven electric field distribution for the LDMOS affected by the vertical electric field. Through the ISE simulation, the results are obtained that the surface electric field is optimized for the proposed SJ-LDMOS when the number of differently doping buffered layers is three. The saturated breakdown voltage for the new SJ-LDMOS is increased by about 50% compared with that for conventional LDMOS, and improved by about 32% compared with that for buffered SJ-LDMOS. The lateral breakdown voltage for unit length is increased to 18.48 V/μm. For the proposed SJ-LDMOS, the specific on-resistance is 25.6 mΩ· cm2 with a breakdown voltage of 382 V, which already breaks the limit relationship of 71.8 mΩ·cm2 with a breakdown voltage of 254 V in the conventional LDMOS.