On the basis of the theoretical imaging method, we study the photodetachment of H- near a deform sphere. We deduce the formula of the detached electron flux. Then we calculate the detached electron flux distribution and the photodetachment cross-section. The calculation results suggest that the influence of the plane on the photodetachment of negative hydrogen ion is only within a certain range. In the region close to the z axis, the spherical effect dominates and the electron flux and photodetachment cross section are the same as those that exist only on the sphere surface. While in the region far from the z axis, both the plane and sphere surface have significant effect and the electron flux and photodetachment cross section become much complicated. If we fix the radius of sphere and the distance between the deform sphere and the negative hydrogen ion, the oscillating amplitude in the electron flux fist increases and then decreases with the increase of the photon energy. Finally it increases slowly. But the oscillating frequency becomes complicated at all times. If we fix the distance between the deform sphere and the negative hydrogen ion, the detached electron flux distribution becomes more like that in the sphere case as the radius of the sphere increases. Hence, we can control the photodetachment of H- near the deform sphere by changing the incident photon energy or the radius of the sphere. Our results will provide some reference values for the photodetachment of H- near the curved surface and the experimental research of microscopy photodetachment.