Higher fracture probability appearing in InSb infrared focal plane array (IRFPA) subjected to thermal shock test, restricts its final yield. In order to understand the fracture mechanism, in light of the proposed equivalent method, where a 32× 32 array is employed to replace the real 128× 128 array, to a three - dimensional structural model of IRFPA is developed by taking into account the temperature dependence of thermal expansion coefficient, anisotropic mechanical strength of InSb chip, damaging effects of the surface of the InSb chip, and a reduction of 90% the out-of-plane elastic modulus. Simulation results show that a maximum Von Mises stress appears in the N electrode zone in InSb chip, and the extremum values present a non-continuous distribution. This means that the cracks is most likely to emerge in the region of N electrode, besides, the number of crack tracks is more than one. These are well consistent with the 128× 128 InSb IRFPA fracture statistics results under thermal shock test. All these are beneficial to the further study of fracture inducing factors and structural reliability design of InSb IRFPA.