Er ions with an energy range of 300—500 keV are implanted in 6H-SiC crystal samples separately. The values of mean projected range Rp and range straggling ΔRp of Er ions with a dose of 5×1015 cm-2 implanted in 6H-SiC crystal are measured by Rutherford backscattering technique. The measured data are compared with TRIM code prediction. It is seen that the experimental Rp values are in good agreement with theoretical values, but for ΔRp values there are bigger differences between the experimental data and the theoretical values. Research shows that the higher the implanting energy, the heavier the damage is. Perfect recrystallization of 6H-SiC is achieved by annealing at 1400 ℃, however it is accompanied by the segregation of Er ions to the surface.