In-situ hydrogen plasma treating technique and burial method using microcrystalline silicon layer were used respectively to reduce the boron contamination in intrinsic layer for the p-i-n type microcrystalline silicon thin film solar cells deposited in single chamber. The measurement results of J-V relation and the quantum efficiency of solar cells proved that both of them improve the short circuit current density of solar cells to some extent. However, each method showed different effects on the other characteristic parameters of solar cells. By optimizing the hydrogen treating time and light trapping structure, single junction microcrystalline silicon thin film solar cell with 6.39% conversion efficiency has been fabricated in single chamber.