On the substrate of r-sapphires a-GaN films grown by metal orgamic chemical vapor deposition was etched in molten KOH-NaOH for 1.0,1.5 and 2.0 min. Scanning electron microscope, atomic force microscope, X-ray diffraction and cathodoluminescence was used to study its morphology and defect. We find that etching for 1.5 min at the temperature of 400 ℃ is appropriate for a-GaN on sapphires substrate. Different from c-GaN which show hexagonal pits, a-GaN shows parallelogram strips. In the direction of c axis it is easier to be etched. That is because the polarity of a-GaN films is anisotropic which leads to different absorption capacities of OH ions in different directions. We also find hexagonal protuberance on the surface which is associated with threading dislocations.