InGaN multiple-quantum-well(MQW) light-emitting diode(LED) thin films were successfully transferred from the original Si(111) substrate to new Si substrate, and then the vertical structure LEDs were fabricated. After the original substrate removal, the residual tensile stress in GaN layer of the transfferred film is partially relaxed, while the compressive stress in InGaN well layer is increased. When the buffer layer of the transferred LED film was eliminated, the tensile stress in GaN layer was shown to increase. However, the compressive stress in InGaN well layer was kept unvaried. The performance of the vertical LEDs was significantly improved compared with the lateral LEDs.