We have designed a novel three-valued single-electron memory.This memory compris es two multiple-tunnel junctions(MTJs) and a single-electron transistor which ac ts as an electrometer.Because the Coulomb gaps of the two multiple-tunnel juncti ons are different,the device have three stable states.It is possible to fabricat e multiple-valued single-electron dynamic random access memories(DRAM)and nonvol atile random access memories(NOVORAM).The memory,which is promising for high fre quency and low power-dissipation,can achieve ultradense data storage.