SiC films were prepared on Si(111) substrates by annealing polystyrene gel films at temperature 950℃ in vacuum(10-3 Pa).Fourier transform infrared spectroscopy(FTIR),X-ray diffraction(XRD), Transmission electron microscopy(TEM).Raman scattering and X-ray photoelectron spectroscopy(XPS) were used to study the morphology of the surface, crystal structure. composition and chemical state of the element of the SiC films. It revealed that the films consisted of preferentially oriented crystalline 6H-SiC epilayer which grew along(0001) planes parallel to Si(111) planes. The ratio of Si to C was about 1 and there were some carbon and oxide contaminant species in the form of CH, CO and Si2O3 along with a small amount of adsorptive oxide at the surface of the films. The polycrystalline grains in the films grew cylindrically along c axis.Their maximum size was about 150nm. The film was smooth. dense and uniform with a thickness of about 0.3 μm. It was found that covering the polystyrene film with a Si plate could increase the quantity of SiC during anncaling.