Amorphous SiO2 is used as the accelerating layer in the layered optimization thin film electroluminescent devices. In this paper we discuss the effects of high electric fields on the transport of electrons in amorphous SiO2. The energy differences between two localized states in the vicinity of the Fermi level or in the tail of the conduction band are lowered due to high electric fields. Therefore, electron transport in these localized states is in the form of thermally-assisted hopping conduction strengthened by electric fields. Based on the experimental data we calculate the average mobility value of electrons in the conduction band, the minimum metal conductivity and the densities of states near the Fermi level and the mobility edge.